Conductive wire through-mold connection apparatus and method

ABSTRACT

A microelectronic structure (200) and a fabrication method of microelectronic are described. A first package (10) has a first conductive pad (40, 41, 47, 48) formed on a first foundation layer (12). A loop of conductive wire (50-53) is wirebonded to the first conductive pad ((40, 41, 47, 48) of the first foundation layer (12). A mold cap (70) is formed on the first foundation layer (12). A via (90-93) is formed in the mold cap (70) to reach the conductive wire (50-53). A solder structure (80-83) is coupled to the conductive wire (50-53). A second package (100) is connected to the first package (10) by attaching a second solder structure (110-113) of a second package (100) to the first solder structure (80-83) of the first package (10).

FIELD

The field encompasses connections for package-on-package andsystem-in-package semiconductor packaging technologies. Moreparticularly, the field pertains to tight pitch through-moldinterconnects.

BACKGROUND

Package-on-package (“PoP”) technology is widely used for electronics toprovide increased functionality and further miniaturization typicallydemanded for consumer devices.

One major type of PoP technology uses a partial molded bottom packagecoupled to an upper package by using solder balls or bumps. Onedisadvantage of this design is the difficulty of controlling warpage ofthe bottom package. Another disadvantage of this design is that arelatively large solder ball is needed to achieve higher ball stand off,which consumes more surface area (i.e., x-y area). Thus, this design hasa larger distance between conductive leads (the distance known as“pitch”), and this is not easily amenable to a fine pitch package—i.e.,a package with relatively small distances between conductive leads.

Another major type of PoP technology uses a fully molded bottom package,which evolved from the partial molded package. The fully molded bottompackage has less warpage and uses through-mold via (“TMV”) connections.For this design, the through-mold via has a solder bump or ball at thebottom of the via of the bottom package. The upper package is connectedby another solder ball that contacts the solder ball of bottom package.

A disadvantage of the fully molded package is the difficulty ofobtaining a fine pitch for leads using through-mold via connections. Toform a TMV, a cavity is formed in the molded epoxy of the bottom packageusing a laser drilling process. Unfortunately, laser drilling results inthe via having a conical shape rather than a cylindrical shape. Theconical via shape means that the pitch of the interconnects increaseswith the thickness of the epoxy mold cap. Moreover, for tight pitchdesigns, during processing the mold separation between vias may beremoved, resulting in shorted solder balls. This may result in highermanufacturing costs for deeper through-mold via designs.

To avoid shorted (i.e., bridged) solder balls, a design using copperpillars or copper posts has been proposed. For that approach, the viadoes not extend all the way through the mold. Instead, a copper pillaror copper post is built up on the bottom substrate. This reduces thedepth of the conically-shaped via in the mold because the via only needsto reach the top of the copper pillar or post. This helps to reduce thevia pitch—i.e., the distance between vias. A disadvantage of the copperpillar or post design is that the cost of additive copper plating invery expensive. Moreover, the current state of the art for the industrywould be a maximum height of 100 to 150 microns for the copper post.

BRIEF DESCRIPTION OF THE DRAWINGS

Features and advantages of embodiments will be apparent from theaccompanying drawings, which provide illustration by way of example andnot limitation, and in which like references indicate similar elements.

FIG. 1 illustrates a package-on-package (“PoP”) design with athrough-mold via (“TMV”) plus a looped wire bond.

FIG. 2 shows an embodiment with a relatively thin mold cavity, whereinthe copper wire can be loop bonded on a single ball pad.

FIG. 3 illustrates a through-mold via plus a vertical wire bond.

FIG. 4 illustrates copper wire bonded onto two conductive pads, with thesecond pad being beyond the edge of the final package.

FIG. 5 illustrates a vertical wire bond used in a system-in-a-packagedesign with a thick epoxy mold cap.

FIG. 6 is a flow chart for forming a packaging structure with a mold capand a looped conductive wire.

FIG. 7 illustrates a fabrication stage for a bottom flip chip (“FC”)package or a package using surface mount technology (“SMT”).

FIG. 8 illustrates a fabrication stage with each wire loop on arespective single conductive pad for a relatively shallow mold cap.

FIG. 9 shows the molding fabrication stage for a shallow mold cap.

FIG. 10 illustrates through-mold vias formed by laser drilling.

FIG. 11 shows solder ball formation for a relatively shallow mold cap.

FIG. 12 illustrates package-on-package formation with each looped wirecontacting a respective conductive metallic pad.

FIG. 13 is a flow chart for forming a packaging structure with a deepmold cap and a vertical conductive wire.

FIG. 14 shows a fabrication stage with conductive metal pads.

FIG. 15 shows a fabrication stage with each relatively high wire loopconnected between a respective main conductive pad and a respectiveauxiliary pad for a deep mold cap.

FIG. 16 shows the fabrication stage for a deep or thick mold cap.

FIG. 17 shows the formation of vertical copper wires by strip grindingand laser ablation.

FIG. 18 shows through-mold vias formed by strip grinding to expose thecopper wires.

FIG. 19 shows solder ball formation for vertical copper wires.

FIG. 20 shows solder ball formation for a relatively deep mold loop andlooped wires looping between two respective conductive metallic pads.

FIG. 21 illustrates the formation of a package-on-package with verticalwires and a relatively shallow mold cap.

FIG. 22 illustrates the formation of a package-on-package with arelatively deep mold cap and wire loops that loop between respectiveconductive metallic pads.

FIG. 23 illustrates a computer system that includes package-on-packagetechnology with conductive wire through-mold interconnects.

DETAILED DESCRIPTION

Low cost through-mold connection methods and apparatuses are describedthat are applicable for electrical and integrated circuit packagingtechnologies involving connections between package and circuit boards,including package-on-package (“PoP”) and system-in-package (“SiP”)technologies. The conductive wire through-mold connection methods andapparatuses help to achieve a fine pitch between solder connections,especially for packaging having deep mold caps.

FIG. 1 illustrates a package-on-package (“PoP”) structure 200 thatincludes a lower package 10 connected both electronically and physicallyto an upper package 100. Lower package 10 includes integrated circuit72. Upper package 100 includes integrated circuit 120.

The lower package 10 includes a foundation layer 12, which is asubstrate. Layer 14 resides below substrate 12 and includes conductivemetallic pads 20 to 24. Solder balls 30 to 34 (also referred to assolder bumps 30-34) are attached to respective conductive metallic pads20 to 24. Solder balls 30 to 34 provide electrical connections topackage 200.

Layer 16 of lower package 10 resides above substrate 12 and includesconductive metal pads 40 to 48. Solder balls (or bumps) 73 to 75connected to respective conductive metallic pads 43 to 45 provideelectrical and physical connections to integrated circuit 72. Althoughnot shown in FIG. 1, conductive interconnect lines within package 10 arecoupled to metallic pads 40-48, and some of the interconnect lines maybe coupled to integrated circuit 72.

A mold cap 70 resides on top of layer 16 and covers integrated circuit72. For one embodiment, mold cap 70 is made of epoxy with fillermaterial. For one embodiment, the filler is approximately 8% of the moldcap 70. For certain embodiments, mold cap 70 can range from 700 micronsto 1,000 microns in height. For other embodiments, other heights arepossible for mold cap 70.

Conductive looped upright wires 50 to 53 are wirebonded to respectiveconductive metallic pads 40, 41, 47, and 48. For one embodiment, each ofpads 40, 41, 47, and 48 is approximately 550 microns wide. For otherembodiments, other dimensions are possible. For one embodiment, thelooped upright wires 50-53 are made of copper. The looped wires 50-53are surrounded on the sides by the mold cap 70.

For the embodiment shown in FIG. 1, the two bottom ends of each loop ofwire are connected to a single conductive metallic pad. For example, thebottom ends of looped wire 50 are bonded to conductive metallic pad 40.In a similar way, each pair of bottom ends of looped wires 51, 52, and53 is bonded to respective metallic pads 41, 47, and 48.

Solder balls (or bumps) 80 to 83 are attached to the respective topportions of respective looped wires 50 to 53. Solder balls 80 to 83reside in respective through-mold vias 90 to 93. For one embodiment,each of solder balls 80 to 83 is approximately 470 microns in diameter.For other embodiments, other sizes are possible.

Each of the through-mold vias 90 to 93 does not extend completelythrough the mold cap 70. Instead, each of the through-mold vias 90 to 93reaches or extends partially through mold cap 70. The vias 90 to 93extend to the respective tops of respective upright looped wires 50 to53.

The solder balls (or bumps) 110 to 113 of upper package 100 are attachedto respective solder balls (or bumps) 80 to 83. Solder balls 110 to 113serve as connectors for upper package 100. Solder balls 110 to 113 areattached to respective conductive metallic pads 130 to 133 of upperpackage 100.

Upper package 100 includes a foundation layer 102, which is a substrate.Upper package 100 also includes an integrated circuit 120. A mold cap104 resides on top of upper package 100 and surrounds the sides and topof the integrated circuit 120. Although not shown in FIG. 1, conductiveinterconnect lines couple conductive metallic pads 130-133 to integratedcircuit 120.

For alternative embodiments, various electrical components andsemiconductors could reside in upper package 100.

The upright wire loops 50 to 53, solder balls 80 to 83, and solder balls110 to 113 provide electrical interconnections and physical couplingsbetween lower package 10 and upper package 100 of PoP 200.

The use of upright wire loops 50 to 53, partial through-mold vias 90 to93, and solder balls 80 to 83 permits a tighter or finer pitch betweenpackage contacts, which helps to facilitate and maximize theminiaturization of packaging of integrated circuits and electricalcomponents. For certain embodiments, examples of the finer pitches are1.00 millimeters and 0.80 millimeters. For other embodiments, otherpitches are possible.

Finer pitch is achieved because of the reduced height of vias 90 to 93.Through-mold vias tend to have conical shapes, rather than cylindricalshapes, with the larger openings at the tops of the vias. The deeper thethrough-mold via, the larger the top of the conical shape. Largerconical openings of vias means that solder balls need to be placedfarther apart. By having vias 90 to 93 of reduced depth, the embodimentof FIG. 1 permits solder balls 80 and 81 to be closer together withoutshorting. The same applies to solder balls 82 and 83.

Avoiding the shorting of solder balls 80-83 also helps to increase theyield of the fabrication of lower package 10. This in turn helps toreduce overall fabrication costs of PoP package 200.

FIG. 2 shows portion 300 of lower package 100 of FIG. 1 to provide amore detailed view. Layer 16 containing conductive metallic pads 41 and42 resides above substrate 12. Layer 14 containing conductive metallicpad 20 resides below substrate 12. Solder bump (or ball) 30 is attachedto conductive metallic pad 20.

Upright conductive looped wire 51 is wirebonded to conductive metallicpad 41. The attachment point 301 contains a bump (ball) bond betweenwire loop 51 and conductive pad 41. The other end 302 of looped wire 51is attached to conductive metallic pad 41 using a stitch bond like acrescent.

For one embodiment, the wire of looped wire 51 is copper wire that isapproximately 20 microns in thickness. For certain embodiments, thelooped wire 51 ranges from 400 microns to 500 microns in height. Forother embodiments, other heights are possible.

FIG. 2 depicts through-mold via 91 without the solder ball (or bump) 81of FIG. 1 being shown. As shown in FIG. 2, the through-mold via 91 doesnot extend entirely through mold cap 70. Instead, via 91 extends down tothe upper portion of wire loop 51. For one embodiment, a portion of wireloop 51 resides in via 91. That upper portion of wire loop 51 in via 91provides a point of attachment and connection to solder ball 81 ofFIG. 1. For one embodiment, the bottom of via 91 extends to the top ofwire loop 51, with the top of wire loop 51 exposed as an attachmentpoint for solder ball 81 of FIG. 1.

FIG. 3 illustrates an embodiment with a vertical wire bond 438 ratherthan a looped wire. FIG. 3 illustrates a portion 400 of a lower package(not shown) that is part of a package-on-package (not shown). Portion400 includes a foundation layer 402, which is a substrate. Layer 408 isabove substrate 402 and layer 404 is below substrate 402. Layer 408includes conductive metallic pads 424 and 426. Layer 404 includesconductive metallic pad 422.

Vertical wire 438 is bonded to conductive metallic pad 424 with ballbond 430 for one embodiment. For one embodiment, vertical wire 438extends from conductive pad 424 into the partial through-mold via 440.For another embodiment, the top of vertical wire 438 extends to thebottom of via 440.

Mold cap 410 resides above layer 408 and surrounds the sides of verticalwire 438. For one embodiment, mold cap 410 is made of epoxy and filler.The mold cap 410 further covers an integrated circuit (not shown).

The via 440 extends only partially through mold cap 410. In a subsequentprocessing step, a solder ball or bump (not shown) would be placed invia 440 and attached to the top of vertical wire 438.

The vertical wire 438 of FIG. 3 is advantageous given that it uses lessmaterial than the upright wire loop 51 of FIG. 2. The vertical wire 438of FIG. 3 is also more easily formed for a deep (high) mold cap 410while retaining a relatively small conductive metallic pad 424.

FIG. 4 illustrates another embodiment of a vertical wire design. FIG. 4shows a packaging structure 500 with a relatively high loop of wire 570with ends attached to conductive metallic pads 544 and 545.

For one embodiment, wire loop 570 can be as tall as 1 millimeter. Forother embodiments, other heights of wire loop 570 are possible.

The packaging structure 500 of FIG. 4 has a substrate 502 acting as afoundation layer. Layer 504 resides above substrate 502 and layer 506resides below substrate 502. Layer 506 has conductive metal pads 520 to522. Layer 504 has conductive metal pads 540 to 545. Solder balls (orbumps) 510 to 512 are attached to respective conductive metallic pads520 to 522.

A mold cap 526 resides above layer 504. Integrated circuit 530 resideswithin mold cap 526. Solder balls (or bumps) 531 to 533 of integratedcircuit 530 are attached to respective conductive metallic pads 541 to543.

As shown in FIG. 4, an upper portion of wire loop 560 resides within apartial through-mold via 570 of mold cap 526.

For the embodiment of FIG. 4, the package structure 500 is cut at line580 as part of the fabrication process. The portion of structure 500 tothe left of line 580 becomes package 591. The portion 592 to the rightof line 580 is removed and is not part of the package 591.

Although not shown in FIG. 4, a solder ball (or bump) is then attachedto wire 570 in package 591, and the solder ball resides in via 570.

FIG. 5 illustrates a vertical wire interconnect 620 in asystem-in-package 600. System-in-package 600 includes a substrate 602,which is a foundation layer, upon which electrical components 640 to 643are mounted. Conductive metallic pads 610 and 611 reside on theunderside of substrate 602 in layer 604.

A thick mold cap 630 made of epoxy with filler is attached to layer 604.Mold cap 630 has a partial through-mold via 650.

Vertical conductive wire 620 is wirebonded to conductive metallic pad611 with a ball bond 621. Solder ball (or bump) 623 is attached tovertical wire 620.

FIG. 6 is a flow chart 700 of a method for fabricating apackage-on-package assembly having a conductive wire loop interconnect.

At operation 701 of process 700, a first conductive pad is formed on afirst foundation layer. Operation 701 of FIG. 6 is illustrated in FIG.7, which shows upper conductive metallic pads 821 to 826 formed on thetop of substrate 802, which is a foundation layer. Conductive pads 821to 826 reside in layer 804.

FIG. 7 also shows underside conductive metallic pads 810 to 814 attachedto substrate 802 and part of layer 806. An integrated circuit 830 isattached to substrate 802 via solder balls (or bumps) 840 to 842, whichare attached to respective conductive metallic pads 823 to 825.

For one embodiment, assembly 800 of FIG. 7 will be a bottom flip chip(“FC”) package that is part of a package-on-package assembly. Foranother embodiment, assembly 800 will be a bottom surface mounttechnology (“SMT”) package that is part of a package-on-packageassembly.

At operation 702 of process 700 of FIG. 6, a loop of conductive wire iswirebonded to a first conductive pad of the first foundation layer.Operation 702 of FIG. 6 is illustrated in FIG. 8, which shows assembly900 with conductive wire loops 902 and 904 made of copper wire. Forother embodiments, other types of wire are used to form the wire loops902 and 904, which are also referred to as wire sticks 902 and 904.

Wire loop 902 is wirebonded to conductive metallic pad 821. For oneembodiment, ball (bump) bonding is used to form ball bond 910. For oneembodiment, a stitch bond is used at end 912 of wire loop 902. For otherembodiments, other types of wirebonding are used, including wedgebonding and compliant bonding. For yet other embodiments, other methodsof attaching wire loop 902 to conductive metallic pad 821 are used.

In a similar fashion, copper wire loop 904 is wirebonded to conductivemetallic pad 826. For one embodiment, ball bonding is used and resultsin ball bond 920. Stitch bonding is used at end 922 of wire loop 904.For other embodiments, other methods are used to attach wire loop 904.

At operation 703 of process 700 of FIG. 6, a mold cap is formed on thefirst foundation layer. Operation 703 of FIG. 6 is illustrated in FIG.9, which shows assembly 1000 with mold cap 1002. Mold cap 1002 is formedabove layer 804. Mold cap 1002 covers integrated circuit 830 and wireloops 902 and 904. For one embodiment, mold cap 1002 is made of epoxyand a filler material. For one embodiment, the filler material comprisesapproximately 8% of the mold 1002. Mold cap 1002 helps to protectintegrated circuit 803 from corrosion and damage.

As part of the fabrication process, various soldering techniques,including reflow soldering, can be used to attach solder balls (orbumps) 1010-1014 to respective conductive metallic pads 810-814. Forother embodiments, solder balls 810-814 can be attached at other stagesof the fabrication process.

At operation 704 of process 700 of FIG. 6, a via is formed in the moldcap to reach the conductive wire. Operation 704 of FIG. 6 is illustratedin FIG. 10, which shows assembly 1100 with a mold cap 1002 containingvias 1120 and 1130. Each of vias 1120 and 1130 is formed in mold cap1002 as a partial through-mold via. Via 1120 reaches and exposes aportion of conductive wire loop 902. Via 1130 reaches and exposes aportion of conductive wire loop 904.

For one embodiment, laser drilling is used to form each of vias 1120 and1130. For another embodiment, strip grinding of mold cap 1002 is donebefore using laser drilling to form each of vias 1120 and 1130.

At generation 705 of process 700 of FIG. 6, a first solder structure iscoupled to the conductive wire. Operation 705 is illustrated in FIG. 11,which shows assembly 1200. Solder ball (or bump) 1210 is placed in via1120 of mold cap 1002 and attached to conductive wire loop 902. Solderball 1220 (or bump) is placed in via 1130 of mold cap 1002 and attachedto conductive wire loop 904. Attachment of solder balls 1210 and 1220may be by various soldering techniques, including reflow soldering.

At operation 706 of process of 700 of FIG. 6, a second solderstructure—which is attached to a second foundation layer—is attached tothe first solder structure. Operation 706 of FIG. 6 is illustrated inFIG. 12, which shows package-on-package assembly 1300, which is made upof upper package 1350 attached to lower package 1352. The attachmentbetween packages 1350 and 1352 is accomplished by attaching solder balls(or bumps) 1310 and 1320 to respective solder balls (or bumps) 1210 and1220. The attachment can be done using various soldering techniques,including reflow soldering.

Solder balls (or bumps) 1310 and 1320 are attached to respectiveconductive metallic pads 1340 and 1341, which are part of layer 1306 andattached to the underside of foundation layer 1302, which for oneembodiment is substrate 1302.

Package 1350 is also made up of a layer 1304 attached to substrate 1302.Integrated circuit 1330 is coupled to layer 1304. Mold cap 1312 coversintegrated circuit 1330 and resides above layer 1304.

FIG. 13 is a flow chart 1400 of a method for fabricating apackage-on-package assembly having a conductive vertical wireinterconnect.

At operation 1401 of process 1400, first and second conductive pads areformed on a first foundation layer. Operation 1401 of FIG. 13 isillustrated in FIG. 14, which shows upper conductive metallic pads 1521to 1527 formed on the top of substrate 802, which is a foundation layer.Conductive pads 1521 to 1527 reside in layer 804.

FIG. 14 also shows underside conductive metallic pads 810 to 814attached to substrate 802 and part of layer 806. Integrated circuit 830is attached to substrate 802 via solder balls (or bumps) 840 to 842,which are attached to respective conductive metallic pads 1523 to 1525.

For one embodiment, assembly 1500 of FIG. 14 will be a bottom flip chip(“FC”) package that is part of a package-on-package assembly. Foranother embodiment, assembly 1500 will be a bottom surface mounttechnology (“SMT”) package that is part of package-on-package assembly.

At operation 1402 of process 1400 of FIG. 13, a loop of conductive wireis wire bonded between first and second conductive pads of the firstfoundation layer. Operation 1402 of FIG. 13 is illustrated in FIG. 15,which shows assembly 1600 with relatively tall (high) conductive wireloops 1602 and 1604 made of copper wire. For other embodiments, othertypes of wire are used to form wire loops 1602 and 1604, which are alsoreferred to as wire sticks 1602 and 1604.

Wire loop 1602 is wirebonded between conductive metallic pad 1522 andconductive metallic pad 1521. For one embodiment, ball bonding is thetype of wire bonding used to form ball bond 1610 with pad 1522. For oneembodiment, end 1612 of wire loop 1602 is stitch bonded to metallic pad1521. For other embodiments, other types of wirebonding are used,including wedge bonding and compliant bonding. For yet otherembodiments, other methods of attaching wire loop 1602 to conductivemetal pads 1521 and 1522 are used.

In a similar fashion, tall copper wire loop 1604 is wirebonded betweenconductive metallic pad 1526 and conductive metallic pad 1527. For oneembodiment, ball bonding is used to form ball bond 1620 with pad 1526.For one embodiment, end 1622 of wire loop 1604 is stitch bonded tometallic pad 1527. For other embodiments, other methods of attachingwire loop 1602 are used.

At operation 1403 of process 1400 of FIG. 13, a mold cap is formed onthe first foundation layer. Operation 1403 of FIG. 13 is illustrated inFIG. 16, which shows assembly 1700 with mold cap 1702. Mold cap 1702 isformed above layer 804. Mold cap 1702 covers integrated circuit 830 andwire loops 1602 and 1604. For one embodiment, mold cap 1702 is made ofepoxy and a filler material. Mold cap 1702 helps to protect integratedcircuit 830 from corrosion and damage.

As part of the fabrication process, various soldering techniquesincluding reflow soldering, can be used to attach solder balls (orbumps) 1010-1014 to respective conductive metallic pads 810-814. Forother embodiments, solder balls 810-814 can be attached at other stagesof the fabrication process.

At operation 1404 of process 1400 of FIG. 13, strip grinding of the moldcap is done to reduce a height of the mold cap and to cut the loop ofconductive wire to form a vertical conductive wire. Operation 1404 ofFIG. 13 is illustrated in FIG. 17, which shows assembly 1800 with a moldcap 1702, with a reduced height due to strip grinding the top surface1840 of mold cap 1702.

The strip grinding of mold cap 1702 results in wire loop 1602 being cutinto separate sections 1812 and 1816, with a portion cut away. Separatesection 1816 is a substantially vertical wire with a ball bond 1610attached to conductive metallic pad 1522.

The strip grinding of mold cap 1702 also results in wire loop 1604 beingcut into separate sections 1814 and 1818, with a portion cut away.Separate section 1818 is a substantially vertical wire with a ball bond1620 attached to a conductive metallic pad 1526.

At operation 1405 of process 1400 of FIG. 13, laser ablation is used toform a via in the mold cap to extend to the vertical conductive wire.Operation 1405 of FIG. 13 is illustrated in FIG. 17, which shows moldcap 1702 containing vias 1820 and 1830. Each of vias 1820 and 1830 isformed in mold cap 1702 as a partial through-mold via. Via 1820 reachesand exposes a top of vertical conductive wire 1816. Via 1830 reaches andexposes a top of vertical conductive wire 1818.

For one embodiment, laser ablation is used to form each of vias 1820 and1830, which results in relatively shallow vias. For another embodiment,laser drilling is used to form vias 1820 and 1830, which results indeeper vias.

FIG. 18 illustrates an alternative embodiment, wherein tall copper wireloops 1602 and 1604 are not cut. This embodiment is especially suitedfor thick mold caps and tall copper wire loops. For the assembly 1900,strip grinding is first used to reduce the overall height of mold cap1702 without cutting wire loops 1602 and 1604. Then laser drilling isused to form vias 1920 and 1930 in mold cap 1702. Each of vias 1920 and1930 is a partial through-mold via. For an alternative embodiment, laserablation is used to form vias 1920 and 1930, which results in shallowervias.

At operation 1406 of process 1400, a first solder structure is coupledto the vertical conductive wire. Operator 1406 is illustrated in FIG.19, which shows assembly 2000. Solder ball (or bump) 2010 is placed invia 1820 of mold cap 1702 and attached to conductive vertical wire 1816.Solder ball (or bump) 2020 is placed in via 1830 of mold cap 1702 andattached to conductive vertical wire 1818. Attachment of solder balls2010 and 2020 may be by various soldering techniques, including reflowsoldering.

For one embodiment, assembly 2000 is cut along lines 2060 and 2061 toremove the sections of assembly 2000 containing sections 1812 and 1814of wire. For another embodiment, assembly is not cut and sections 1812and 1814 of wire are not removed.

FIG. 20 shows an alternative embodiment, wherein solder ball (or bump)2110 is placed in via 1920 of mold cap 1702 of assembly 2100 andattached to tall conductive wire loop 1602. Solder ball (or bump) 2120is placed in via 1930 of mold cap 1702 and attached to tall conductivewire loop 1604. Attachment of solder balls 2110 and 2120 may be byvarious soldering techniques, including reflow soldering.

For one embodiment, assembly 2100 is cut along lines 2160 and 2161 to(1) cut respective wire loops 1602 and 1604 and (2) remove end portionsof assembly 2100. For another embodiment, assembly 2100 is not cut, andwire loops 1602 and 1604 are not cut.

At operation 1407 of process 1400 of FIG. 13, a second solderstructure—which is attached to a second foundation layer—is attached tothe first solder structure. Operation 1407 of FIG. 13 is illustrated inFIG. 21, which shows package-on-package assembly 2200, which is made upof upper package 1350 attached to lower package 2000. The attachmentbetween packages 1350 and 2000 is accomplished by attached solder balls(or bumps) 1310 and 1320 to respective solder balls (or bumps) 2010 and2020. The attachment can be done using various soldering techniques,including reflow soldering.

Solder balls (or bumps) 1310 and 1320 are attached to respectiveconductive metallic pads 1340 and 1341, which are part of layer 1306 andattached to the underside of foundation layer 1302, which for oneembodiment is substrate 1302.

Package 1350 is also made up of a layer 1304 attached to substrate 1302.Integrated circuit 1330 is coupled to layer 1304. Mold cap 1312 coversintegrated circuit 1330 and resides above layer 1304.

For an alternative embodiment, package-on-package assembly 2300 of FIG.22 is made up of upper package 1350 attached to lower package 2100. Theattachment between packages 1350 and 2100 is accomplished by attachingsolder balls (or bumps) 1310 and 1320 to respective solder balls (orbumps) 2110 and 2120. The attachment can be done using various solderingtechniques, including reflow soldering.

Soldering balls (or bumps) 1310 and 1320 are attached to respectiveconductive metallic pads 1340 and 1341, which are part of layer 1306 andattached to the underside of foundation layer 1302, which for oneembodiment is substrate 1302.

Package 1350 is also made up of a layer 1304 attached to substrate 1302.Integrated circuit 1330 is coupled to layer 1304. Mold cap 1312 coversintegrated circuit 1330 and resides above layer 1304.

For alternative embodiments, substrate 1302 of FIGS. 12, 21, and 22 canbe a printed circuit board. For alternative embodiments, electricalcomponents can reside on substrate 1302 or on a printed circuit board.For alternative embodiments, various packages can be substituted forpackage 1350 of FIGS. 12, 21, and 22, including a system-in-package.

For alternative embodiments, substrate 802 of FIGS. 12, 21, and 22 canbe a printed circuit board. For alternative embodiments, electricalcomponents can reside on substrate 802 or on a printed circuit board.

Various semiconducting fabrication techniques and package-on-packagefabrication techniques can be used in conjunction with the fabricationmethods described above in connection with FIGS. 6 to 22.

Some operations in one or more embodiments of the process flowsdescribed herein may be omitted or performed in a sequence that isdifferent from what is illustrated or described herein.

The terms “over,” “to,” “between,” and “on” as used in the foregoingspecification refer to a relative position of one layer with respect toother layers. One layer “over” or “on” another layer or bonded “to” orin “contact” with another layer may be directly in contact with theother layer or may have one or more intervening layers. One layer“between” layers may be directly in contact with the layers or may haveone or more intervening layers.

The description provided above in connection with one or moreembodiments of a semiconductor package may also be used for other typesof IC packages and mixed logic-memory package stacks. In addition, theprocessing sequences used to form one or more embodiments of asemiconductor package may be compatible with both wafer level packages(“WLP”), and integration with surface mount substrates such as Land GridArray (“LGA”), Quad-Flat No Leads (“QFN”), and ceramic substrates.

The computer system 3000 (also referred to as the electronic system3000) as depicted in FIG. 23 can embody packaging employing conductivewire through-mold interconnections, according to any of the severaldisclosed embodiments and their equivalents as set forth in thisdisclosure. The computer system 3000 may be a mobile device such as anetbook computer. The computer system 3000 may be a mobile device suchas a wireless smart phone. The computer system 3000 may be a desktopcomputer. The computer system 3000 may be a hand-held reader. Thecomputer system 3000 may be a server system. The computer system 3000may be a supercomputer or high-performance computing system.

For an embodiment, the electronic system 3000 is a computer system thatincludes a system bus 3020 to electrically couple the various componentsof the electronic system 3000. The system bus 3020 is a single bus orany combination of buses according to various embodiments. Theelectronic system 3000 includes a voltage source 3030 that providespower to the integrated circuit 3010. For some embodiments, the voltagesource 3030 supplies current to the integrated circuit 3010 through thesystem bus 3020.

The integrated circuit 3010 is electrically coupled to the system bus3020 and includes any circuit, or combination of circuits according toan embodiment. For an embodiment, the integrated circuit 3010 includes aprocessor 3012 that can be of any type. As used herein, the processor3012 may mean any type of circuit such as, but not limited to, amicroprocessor, a microcontroller, a graphics processor, a digitalsignal processor, or another processor. In an embodiment, the processor3012 includes, or is coupled with, packaging employing conductive wirethrough-mold interconnections, as disclosed herein. For an embodiment,SRAM embodiments are found in memory caches of the processor. Othertypes of circuits that can be included in the integrated circuit 3010are a custom circuit or an application-specific integrated circuit(ASIC), such as a communications circuit 3014 for use in wirelessdevices such as cellular telephones, smart phones, pagers, portablecomputers, two-way radios, and similar electronic systems, or acommunications circuit for servers. For an embodiment, the integratedcircuit 3010 includes on-die memory 3016 such as static random-accessmemory (SRAM). For an embodiment, the integrated circuit 3010 includesembedded on-die memory 3016 such as embedded dynamic random-accessmemory (eDRAM).

For an embodiment, the integrated circuit 3010 is complemented with asubsequent integrated circuit 3011. Useful embodiments include a dualprocessor 3013 and a dual communications circuit 3015 and dual on-diememory 3017 such as SRAM. For an embodiment, the dual integrated circuit3010 includes embedded on-die memory 3017 such as eDRAM.

For an embodiment, the electronic system 3000 also includes an externalmemory 3040 that in turn may include one or more memory elementssuitable to the particular application, such as a main memory 3042 inthe form of RAM, one or more hard drives 3044, and/or one or more drivesthat handle removable media 3046, such as diskettes, compact disks(CDs), digital variable disks (DVDs), flash memory drives, and otherremovable media known in the art. The external memory 3040 may also beembedded memory 3048 such as the first die in a die stack, according toan embodiment.

For an embodiment, the electronic system 3000 also includes a displaydevice 3050, an audio output 3060. For an embodiment, the electronicsystem 3000 includes an input device such as a controller 3070 that maybe a keyboard, mouse, trackball, game controller, microphone,voice-recognition device, or any other input device that inputsinformation into the electronic system 3000. For an embodiment, an inputdevice 3070 is a camera. For an embodiment, an input device 3070 is adigital sound recorder. For an embodiment, an input device 3070 is acamera and a digital sound recorder.

As shown herein, the integrated circuit 3010 can be implemented in anumber of different embodiments, including packaging employingconductive wire through-mold interconnections, according to any of theseveral disclosed embodiments and their equivalents, an electronicsystem, a computer system, one or more methods of fabricating anintegrated circuit, and one or more methods of fabricating an electronicassembly that includes packaging employing conductive wire through-moldinterconnections, according to any of the several disclosed embodimentsas set forth herein in the various embodiments and their art-recognizedequivalents. The elements, materials, geometries, dimensions, andsequence of operations can all be varied to suit particular I/O couplingrequirements including array contact count, array contact configurationfor a microelectronic die embedded in a processor mounting substrateaccording to any of the several disclosed packaging employing conductivewire through-mold interconnections and their equivalents. A foundationsubstrate may be included, as represented by the dashed line of FIG. 23.Passive devices 3052 may also be included, as is also depicted in FIG.23.

The following are examples of embodiments.

For one embodiment, a microelectronic structure has a first package thatincludes a first foundation layer. A mold cap with a via is coupled tothe first foundation layer. A first conductive pad is coupled to thefirst foundation layer. A conductive wire is wirebonded to the firstconductive pad. The conductive wire extends to the via. A first solderstructure is coupled to the conductive wire in the via to provide aconnection to the first package.

For one embodiment, a second package has a second foundation layer and asecond conductive pad coupled to the second foundation layer. A secondsolder structure is coupled to (1) the second conductive pad and (2) thefirst solder structure of the first package to couple the second packageto the first package.

For one embodiment, the first foundation layer is a substrate. Foranother embodiment, the first foundation layer is a circuit board.

For one embodiment, the conductive wire is copper wire.

For one embodiment, the first package includes an integrated circuitcoupled to the first conductive pad. For another embodiment, the firstpackage includes an electrical component coupled to the first conductivepad.

For one embodiment, the first solder structure is a first solder ball.

For one embodiment, the conductive wire is a looped copper wire. Foranother embodiment, the conductive wire is a vertical copper wire.

For one embodiment, the second foundation layer of the second package isa substrate. For another embodiment, the second foundation layer of thesecond package is a circuit board.

Another embodiment is a microelectronic structure that has a firstpackage and a printed circuit board. The first package has a mold capcoupled to a first foundation layer. The mold cap has a via. A firstconductive pad is coupled to the first foundation layer. A conductivewire is wirebonded to the first conductive pad and extends to the via. Afirst solder structure is coupled to the conductive wire in the via toprovide a connection to the first package. The printed circuit board hasa second conductive pad and a second solder structure. The second solderstructure is coupled to (1) the second conductive pad and (2) the firstsolder structure of the first package to couple the first package to theprinted circuit board.

For another embodiment, a method of microelectronic fabrication includesforming a first conductive pad on a first foundation layer. A loop ofconductive wire is wirebonded to the first conductive pad of the firstfoundation layer. A mold cap is formed on the first foundation layer. Avia is formed in the mold cap to reach the conductive wire. A solderstructure is formed and is coupled to the conductive wire.

For another embodiment, a second solder structure is attached to thefirst solder structure. The second solder structure is coupled to asecond conductive pad coupled to a second foundation layer.

For one embodiment, the first foundation layer of the method ofmicroelectronic fabrication is a substrate. For another embodiment, thefirst foundation layer of the method of microelectronic fabrication is acircuit board.

For one embodiment, a via is formed in the mold cap by laser drillingthe mold cap.

For one embodiment, the second foundation layer of the method ofmicroelectronic fabrication is a substrate of a second package. Foranother embodiment, the second foundation layer of the method ofmicroelectronic fabrication is a circuit board.

Another embodiment is a method of microelectronic fabrication. First andsecond conductive pads are formed on a first foundation layer. A loop ofconductive wire is wirebonded between the first and second conductivepads of the first foundation layer. A mold cap is formed on the firstfoundation layer. The mold cap is strip grinded to reduce a height ofthe mold cap and to cut the loop of conductive wire to form a verticalconductive wire. Laser ablation is used to form a via in the mold cap toextend to the vertical conductive wire. A solder structure is formedthat is coupled to the vertical conductive wire.

For another embodiment, a second solder structure is attached to thefirst solder structure. The second solder structure is coupled to asecond conductive pad coupled to a second foundation layer.

For one embodiment, the first foundation layer is a substrate of a firstpackage and the second foundation layer is a substrate of a secondpackage. For another embodiment, the first foundation layer is asubstrate of a first package and the second foundation layer is acircuit board.

In the foregoing specification, the description has been with referenceto specific exemplary embodiments. It will, however, be evident thatvarious modifications and changes may be made thereto without departingfrom the spirit and scope. The specification and drawings are,accordingly, to be regarded in an illustrative rather than a restrictivesense.

1. A microelectronic structure comprising: a first package comprising: afirst foundation layer; a mold cap with a via, wherein the mold cap iscoupled to the first foundation layer; a first conductive pad coupled tothe first foundation layer; a conductive wire wirebonded to the firstconductive pad and extending to the via; a first solder structurecoupled to the conductive wire in the via to provide a connection to thefirst package.
 2. The microelectronic structure of claim 1, wherein thefirst foundation layer comprises a substrate.
 3. The microelectronicstructure of claim 1, wherein the first foundation layer comprises acircuit board.
 4. The microelectronic structure of claim 1, wherein theconductive wire comprises a copper wire.
 5. The microelectronicstructure of claim 1, wherein the first package further comprises anintegrated circuit coupled to the first conductive pad.
 6. Themicroelectronic structure of claim 1, wherein the first package furthercomprises an electrical component coupled to the first conductive pad.7. The microelectronic structure of claim 1, wherein the first solderstructure comprises a first solder ball.
 8. The microelectronicstructure of claim 1, wherein the conductive wire comprises a conductivevertical wire.
 9. The microelectronic structure of claim 1, wherein theconductive wire comprises a conductive looped wire.
 10. Themicroelectronic structure of claim 1, further comprising: a secondpackage comprising: a second foundation layer; a second conductive padcoupled to the second foundation layer; a second solder structurecoupled to (1) the second conductive pad and (2) the first solderstructure of the first package to couple the second package to the firstpackage.
 11. The microelectronic structure of claim 10, wherein thesecond foundation layer of the second package comprises a substrate. 12.The microelectronic structure of claim 10, wherein the second foundationlayer of the second package comprises a circuit board.
 13. Themicroelectronic structure of claim 1, further comprising: a printedcircuit board comprising: a second conductive pad; a second solderstructure coupled to (1) the second conductive pad and (2) the firstsolder structure of the first package to couple the first package to theprinted circuit board.
 14. A method of microelectronic fabricationcomprising: forming a first conductive pad on a first foundation layer;wirebonding a loop of conductive wire to the first conductive pad of thefirst foundation layer; forming a mold cap on the first foundationlayer; forming a via in the mold cap to reach the conductive wire;forming a solder structure coupled to the conductive wire.
 15. Themethod of microelectronic fabrication of claim 14, wherein the firstfoundation layer comprises a substrate.
 16. The method ofmicroelectronic fabrication of claim 14, wherein the first foundationlayer comprises a circuit board.
 17. The method of microelectronicfabrication of claim 14, wherein forming the via in the mold capcomprises laser drilling the mold cap.
 18. The method of microelectronicfabrication of claim 14, further comprising: attaching a second solderstructure to the first solder structure, wherein the second solderstructure is coupled to a second conductive pad coupled to a secondfoundation layer.
 19. The method of microelectronic fabrication of claim18, wherein the second foundation layer is a substrate of a secondpackage.
 20. The method of microelectronic fabrication of claim 18,wherein the second foundation layer is a circuit board.
 21. A method ofmicroelectronic fabrication comprising: forming first and secondconductive pads on a first foundation layer; wirebonding a loop ofconductive wire between the first and second conductive pads of thefirst foundation layer; forming a mold cap on the first foundationlayer; strip grinding the mold cap to reduce a height of the mold capand to cut the loop of conductive wire to form a vertical conductivewire; using laser ablation to form a via in the mold cap to extend tothe vertical conductive wire; forming a solder structure coupled to thevertical conductive wire.
 22. The method of microelectronic fabricationof claim 21, further comprising: attaching a second solder structure tothe first solder structure, wherein the second solder structure iscoupled to a second conductive pad coupled to a second foundation layer.23. The method of microelectronic fabrication of claim 22, wherein thefirst foundation layer is a substrate of a first package and the secondfoundation layer is a substrate of a second package.
 24. The method ofmicroelectronic fabrication of claim 22, wherein the first foundationlayer is a substrate of a first package and the second foundation layeris a circuit board.